Semi-insulating silicon carbide without vanadium domination
AssigneeCree, Inc.
InventorsCalvin H. Carter, Jr., Mark Brady, Valeri F. Tsvetkov
Life of this patent
Estimating the term…
Abstract
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
Claims5
A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below 1×1016 cm−3 and a concentration of nitrogen atoms below 1×1017 cm−3.
A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below 1×1016 cm−3 and the concentration of vanadium is less than 1×1016 cm−3.
A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 50,000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below 1×1016 cm−3.
Dependencies are inferred from the claim text.