Polymer for chemical amplified photoresist compositions
AssigneeEverlight USA, Inc.
InventorsChi-Sheng Chen, Yen-Cheng Li, Meng-Hsum Cheng
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Abstract
The present invention discloses a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The polymer of the present invention can be used to form the chemical amplified photoresist composition, which can then be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light source, and exhibit excellent resolution, figures and photosensitivity.
Claims27
A polymer comprising units of the formula (II) and having a weight average molecular weight of 1,000 to 500,000,
- wherein R1 is H, haloalkyl group or C1-C4 alkyl group;
- R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group;
- G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4;
- Rc is a lactone group;
- and m is 1, 2 or 3.
A polymer, which is prepared by polymerizing or copolymerizing the following formula (I),
- wherein R1 is H, haloalkyl group or C1-C4 alkyl group;
- R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group;
- G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4;
- Rc is a lactone group;
- and m is 1,2 or 3.
Dependencies are inferred from the claim text.