Methods used in fabricating gates in integrated circuit device structures
AssigneeApplied Materials, Inc.
InventorsSang In Yi, Seowoo Nam, Kenlin Huang, Padmapani C. Nallan
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Abstract
One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.
Claims21
A method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method comprises steps of:
- etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer;
- and
- etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen, which passivation etching chemistry is selective to the gate oxide.
A method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method comprises steps of:
- etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer;
- and
- etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen,
- wherein the step of etching the refractory metal layer utilizes a main etch chemistry that includes CF4:
- and wherein the main etch chemistry further includes NF3.
A method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method comprises steps of:
- etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer;
- and
- etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen;
- wherein etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen utilizes an overetch chemistry that includes HBr, and
- wherein the refractory metal layer is a Ta layer, and the refractory metal barrier/adhesion layer is a TaNx layer.
Dependencies are inferred from the claim text.