Semiconductor device producing method

A semiconductor device producing method comprising:

• a first step which carries out an etching process during a time between a start and an end of a plasma etching, said etching process being selected from a group consisting of an etching process which includes no exposing of a first specific metal which affects variation of an etching rate, an etching process which includes no positioning of the first specific metal exposed from an etching mask, an etching process which includes exposing of the first specific metal located at a surface other than an etching target surface of a semiconductor substrate, and an etching process which includes exposing the first specific metal having a thickness smaller than a thickness of other etching targets regardless of an existence of the etching mask;
• and
• a second step which introduces a gas including a second specific metal into an etching reaction chamber as a pre-processing prior to the etching process of said first step.

An electronic device producing method comprising:

• a first step which carries out an etching process during a time between a start and an end of a plasma etching, the etching process being selected from a group consisting of an etching process which includes no exposing of a specific metal which affects variation of an etching rate, an etching process which includes no positioning of the specific metal exposed from an etching mask, an etching process which includes exposing of the specific metal located at a surface other than an etching target surface of a substrate, and an etching process which includes exposing of the specific metal having a thickness smaller than a thickness of other etching targets regardless of an existence of the etching mask;
• and
• a second step which carries out a plasma etching with respect to a specific metal as a pre-processing prior to the etching process of the first step.