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US 6,638,861 B1Granted
Method of eliminating voids in W plugs
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Eric Paton
Life of this patent
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Abstract
Reliable contacts/vias are formed by filling an opening in a dielectric layer with W and laser thermal annealing to eliminate or significantly reduce voids. Embodiments include depositing W to fill a contact/via opening in an interlayer dielectric, laser thermal annealing in N2 to elevate the temperature of the W filling the contact/via opening and reflow the W thereby eliminating voids. Embodiments include conducting CMP either before or subsequent to laser thermal annealing.
Claims16
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer;
- depositing tungsten (W) into the opening;
- and
- laser thermal annealing the deposited W to melt and reflow the W in the opening.
1 more element
Dependencies are inferred from the claim text.