Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorHiroshi Kagiwata
Life of this patent
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Abstract
A semiconductor device comprises fuse elements formed on an insulating interlayer over a semiconductor substrate. A groove is formed in the insulating interlayer at each space between the fuse elements. A silicon nitride film of a predetermined thickness covers the side and upper surfaces of each fuse element. Since the side and upper surfaces of each fuse element are covered with the silicon nitride film of the same thickness, the film covering the fuse elements has no local weak point. Consequently, when a fuse element is blown out by applying laser beams, it is prevented that the silicon nitride film breaks before the temperature of the fuse element fully rises, and melted fuse element flows out.
Claims5
A manufacturing method of a semiconductor device, said method comprising:
- the first step of forming fuse elements of a predetermined shape on a first insulating layer over a semiconductor substrate;
- the second step of removing a predetermined quantity of said first insulating layer at each space between said fuse elements using said fuse elements as masks to form a groove;
- and
- the third step of forming a second insulating layer of a predetermined thickness to cover the side and upper surfaces of each of said fuse elements and the inner surface of said groove.
Dependencies are inferred from the claim text.