Semiconductor device and method of fabricating the same
AssigneeFujitsu Limited
InventorsMasanobu Ikeda, Satoshi Otsuka
Life of this patent
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Abstract
A redundancy fuse is made up of a Cu—Al alloy film and a TiN film covering the surrounding surface of this Cu—Al alloy film. When this fuse is cut, the Cu—Al alloy film in the cut portion thermally diffuses by an abrupt temperature rise, and Al preferentially combines with oxygen because Al is baser than Cu. Al oxidizes in the atmosphere, and AlOx as the stable metal oxide produced sticks to the cut surfaces of the redundancy fuse to form a film in self-alignment. This film functions as a protective film to prevent the generation of corrosion.
Claims18
A semiconductor device comprising a wiring structure having an interconnect and fuse made of a material containing at least Cu, wherein
- said fuse comprises:
- an alloy material consisting of a metal capable of forming a metal oxide and Cu;
- and
- a metal material which covers the surrounding surface of said alloy material and has absorption to the wavelength of a laser beam used to cut said fuse;
- wherein when said fuse is cut by the laser beam, a film containing said metal oxide is formed to cover the cut surfaces.
A method of fabricating a semiconductor device, comprising the steps of:
- forming an interconnect made of a material containing at least Cu;
- and
- forming a fuse by using an alloy material and a metal material, said alloy material consisting of a metal capable of forming a metal oxide and Cu, and said metal material covering the surrounding surface of said alloy material and having absorption to the wavelength of a laser beam used to cut said fuse;
- cutting said fuse by irradiating said fuse with the laser beam;
- wherein in the cutting step, a film containing said metal oxide is formed to cover the cut surfaces of said fuse.
Dependencies are inferred from the claim text.