Phase-shifting mask and semiconductor device
AssigneeAgere Systems Inc.
InventorFeng Jin
Life of this patent
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Abstract
Disclosed is a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. Further disclosed is a semiconductor device fabricated utilizing the phase-shifting mask.
Claims7
A phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation on the plurality of substantially transparent regions and wherein the phases are substantially equally spaced such that their corresponding electric field vectors sum to zero.
A three-phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of the radiation incident on at least a first substantially transparent region by about 2/3π radians and on at least a second substantially transparent region by about 4/3π radians, and allows a portion of the radiation to pass through at least a third substantially transparent region essentially unshifted such that their corresponding electric field vectors sum to zero.
Dependencies are inferred from the claim text.