Structure to reduce the degradation of the Q value of an inductor caused by via resistance

The structure of a spiral inductor, comprising:

• a substrate, interconnect lines over said substrate for connection thereto of inductor terminals;
• a layer of dielectric over said substrate, thereby including said interconnect lines;
• a layer of passivation over said layer of dielectric;
• first via openings through said layers of dielectric and passivation aligned with said interconnect lines, exposing said interconnect lines, said first via openings being large enough for deposition of a layer of metal with a thickness between about 6 and 26 μm over inside surfaces of said first vias;
• a first layer of metal over said layer of passivation, including inside surfaces of said first via openings created through said layers of passivation and dielectric, said first layer of metal having a thickness between about 6 and 26 μm;
• said deposited first layer of metal having been patterned and etched, creating metal lines for an inductor, further creating first vias for interconnect said inductor to said exposed surfaces of said interconnect lines, said first vias being connected to said inductor and forming terminal ports for said inductor, said first vias having a surface area overlying said layer of passivation larger than about 0.17×0.17 μm;
• and
• a layer of polyimide deposited over said layer of passivation, including said created inductor and inside surfaces of said created first vias.