Semiconductor device having a reduced leakage current
AssigneeNEC Electronics Corporation
InventorHiroyuki Takahashi
Life of this patent
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Abstract
A semiconductor device including a plurality of logic circuits (G1 to G4) and an insulated gate field effect transistor (IGFET) (N2). The IGFET (N2) may have a current path connected between each of the logic circuits (G1 to G4) and a first reference supply node (VSS). Each logic circuit (G1 to G4) may have a logic output node (Q) that may be at a potential different than the first reference supply when IGFET (N2) is turned off. The IGFET (N2) may have a counter measure to reduce leakage caused by short channel effects when the IGFET is turned off. In this way, leakage current may be reduced.
Claims13
A semiconductor device, comprising:
- a first insulated gate field effect transistor (IGFET) having a first IGFET current path connected between a first node and a second node fixed at a first predetermined potential;
- and
- wherein the first IGFET includes a counter measure to reduce leakage current caused by short channel effects in a region near a boundary between a first IGFET active region and a field region when the first IGFET is turned off and the first node is at a second predetermined potential.
The semiconductor device, comprising:
- a plurality of logic circuits;
- a first reference supply node providing a first predetermined potential to the plurality of logic circuits;
- a first IGFET having a first IGFET current path connected between each of the logic circuits and the first reference supply node;
- and
- each logic circuit includes a logic output node that is at a second potential different than the first predetermined potential when the first IGFET is turned off wherein the first IGFET includes a counter measure to reduce leakage current caused by short channel effects in a region near a boundary between a first IGFET active region and a field region when the first IGFET is turned off.
Dependencies are inferred from the claim text.