Air gap semiconductor structure and method of manufacture
AssigneeUnited Microelectronics Corp.
InventorsTing-Chang Chang, Yi-Shien Mor, Po-Tsun Liu
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Abstract
An air gap semiconductor structure and corresponding method of manufacture. The method includes forming a sacrificial polymer film over a substrate having metal lines thereon. A portion of the sacrificial polymer film is subsequently removed to form first spacers. A micro-porous structure layer is formed over the substrate and the metal lines and between the first spacers. A portion of the micro-porous structure layer is removed to form second spacers. The first spacers are removed by thermal dissociation to form air gaps. A dielectric layer is formed over the substrate and the metal lines and between the second spacers.
Claims7
An air gap semiconductor device, comprising:
- a substrate having a plurality of metal lines thereon;
- a micro-porous structure layer between each two of the metal lines, wherein a first end of the micro-porous structure contacts with top corners of the metal lines, and a second end of the micro-porous structure contacts with the substrate, with a plurality of spacer-like air gaps located between the micro-porous structure and the metal lines;
- and
- a dielectric layer over the substrate covering the metal lines and the micro-porous structure layer.
Dependencies are inferred from the claim text.