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US 6,635,950 B1Granted
Semiconductor device having buried boron and carbon regions, and method of manufacture thereof
AssigneeHitachi, Ltd.
InventorsHidetsugu Ishida, Seiichi Isomae
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Abstract
To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 μm is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
Claims8
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- an epitaxial layer of a first conductivity type formed on the substrate, the epitaxial layer having a surface;
- a well region of a conductivity type formed in the said epitaxial layer, said well region extending from the surface of the epitaxial layer to said substrate and having a surface;
- and
- a gate insulating layer formed on the surface of said well region,
- wherein the well region includes implanted boron impurities and implanted boron impurities, and wherein a depth of a peak concentration of said implanted boron impurities and a depth of a peak concentration of said implanted carbon impurities are substantially equal.
3 more elements
Dependencies are inferred from the claim text.