Power semiconductor component having a PN junction with a low area edge termination

A component, comprising:

• a semiconductor body including two doped regions and a main side with a surface;
• a pn junction located between said two doped regions;
• a further doped region having an electrical conductivity with a first sign;
• and
• a zone doped having an electrical conductivity with the first sign;
• said pn junction occupying a portion of a plane that is parallel to said main side, said pn junction having edges that run toward said surface of said main side, said pn junction having a side that faces said main side;
• said two doped regions including a first doped region and a second doped region;
• said second doped region having the electrical conductivity of the first sign;
• said second doped region configured on said side of said pn junction that faces said main side, said second doped region being laterally surrounded by said further doped region, said further doped region having a lower doping concentration than that of said second doped region;
• said further doped region having a dielectric region oriented essentially perpendicularly to said main side, said dielectric region extending into said first doped region opposite from said pn junction;
• said zone surrounding said dielectric region;
• said dielectric region defining a bounding area bounding said zone;
• and
• said zone having a doping concentration such that an integral of the doping concentration of said zone in a direction perpendicular to said bounding area of said dielectric region is not greater then 1012 cm−2.