Semiconductor device and method for fabricating the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorJin Hyeok Choi
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Abstract
The present invention relates to the field of the semiconductor fabrication. Also, the objects of the present invention are to provide a semiconductor device and method for fabricating the same having the MOS transistors capable of improving the thermal conduction characteristics and the punch-through and the DIBL effect. To accomplish these objects, the present invention provides the semiconductor device including a semiconductor substrate; a first insulating layer, a selected material layer and a second insulating layer orderly stacked on said semiconductor substrate; and a semiconductor layer formed on the second insulating layer for providing an active area where MOS transistors are formed, wherein, said material layer provides a path for emitting heat generated from said MOS transistors.
Claims5
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer, a polysilicon layer and a second insulating layer orderly stacked on said semiconductor substrate wherein an impurity doped layer is formed with an impurity concentration of more than 1×1017 ions/cm3 inside of the polysilicon layer to reduce a punch-through or DIBL effect;
- a semiconductor layer formed on the second insulating layer for providing an active area where MOS transistors are formed;
- and
- a gate and a gate oxide film formed on the semiconductor layer,
- wherein, said polysilicon layer provides a path for emitting heat generated from said MOS transistors.
Dependencies are inferred from the claim text.