Method of removing material from a semiconductor substrate
AssigneeMicron Technology, Inc.
InventorsGuy F. Hudson, Michael A. Walker
Life of this patent
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Abstract
Methods of oxidizing the surface of a photoresist material on a semiconductor substrate to alter the photoresist material surface to be substantially hydrophillic. Oxidation of the photoresist material surface substantially reduces or eliminates stiction between a planarizing pad and the photoresist material surface during chemical mechanical planarization. This oxidation of the photoresist material may be achieved by oxygen plasma etching or ashing, by immersing the semiconductor substrate in a bath containing an oxidizing agent, or by the addition an oxidizing agent to the chemical slurry used during planarization of the resist material.
Claims11
A method of removing all or part of a material layer from a semiconductor substrate, comprising:
- providing a semiconductor substrate having at least one material layer, said material layer reactive with at least one chemical species, wherein said at least one chemical species causes said material layer to become substantially hydrophilic;
- initiating removal of at least a portion of said at least one material layer in a first environment by reacting at least a portion of said at least one material layer with said at least one chemical species;
- and
- finishing said removal of a reacted portion of said at least one material layer in a second, differing environment by planarizing said material layer such that the entire reacted portion is substantially removed;
- wherein said second environment comprises water.
Dependencies are inferred from the claim text.