Semiconductor device, and method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device having a capacitor of metal-insulator-metal structure, the capacitor comprising an upper metal electrode, a lower metal electrode, and a capacitive dielectric film formed between said upper and lower metal electrodes, wherein the surface of said lower metal electrode is rough and said lower metal electrode is formed on a surface of a hole or trench formed in an interlayer insulating film, the method comprising the steps of:

• etching an interlayer insulating film to thereby form a hole or trench;
• forming a lower metal electrode on the surface of the interlayer insulating film including the surface of said hole or trench formed therein;
• forming an amorphous silicon film or amorphous metal silicide film on said lower metal electrode;
• roughening said amorphous silicon film or said amorphous metal silicide film thereby forming rough polysilicon;
• etching said lower metal electrode while said rough polysilicon is taken as a mask, thereby roughening the surface of said lower metal electrode;
• removing said rough polysilicon;
• removing said lower metal electrode on said interlayer insulating film such that a portion of said lower metal electrode remains on the surface of said hole or trench;
• forming a capacitive dielectric film on the lower metal electrode;
• and
• forming an upper metal electrode on the capacitive dielectric film.