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US 6,635,550 B2Granted
Semiconductor on insulator device architecture and method of construction
AssigneeTexas Instruments Incorporated
InventorTheodore W. Houston
Life of this patent
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Abstract
An SOI architecture is provided that comprises an inner substrate 10 which has a buried conductor layer 12 formed on an outer surface thereof. A bonding layer 14 is used to provide a cohesive bond with a buried insulator layer 18. The semiconductor device layer 20 is formed on the outer surface of buried insulator layer 18. An inductive well 22 can be formed to provide a platform for the formation of inductive devices 34 within an inductive region 26.
Claims4
A method of forming an electronic device comprising:
- providing an inner semiconductor substrate;
- forming a buried conductive layer on the outer surface of the inner substrate;
- forming a semiconductive bonding layer on an outer surface of the buried conductive layer;
- bonding an outer substrate to the outer surface of the bonding layer, the outer substrate comprising a buried insulator layer having a surface bonded to the outer surface of the bonding layer, the outer substrate further comprising a semiconductive device layer disposed outwardly from the buried insulator layer;
- and
- forming an insulator well defining an inductive region, the insulator well comprised of an insulative material and disposed in a trench formed in the electronic device such that the insulative material of the insulator well is in contact with the inner substrate, the buried conductive layer, the bonding layer, the buried insulator layer, and the device layer.
3 more elements
Dependencies are inferred from the claim text.