Capacitor and method for forming same

Abstract

A method of forming an integrated circuit interconnect level capacitor is disclosed. In an exemplary embodiment, the method includes depositing a first insulator layer over an interconnect level surface of a semiconductor substrate having active devices. First and second conductive lines are formed in the first insulator layer, and the first insulator layer is etched to form a trench therein between the first and second conductive lines. A first conductive layer is deposited over the first and second conductive lines the said trench. A second insulator layer is deposited over the first conductive layer, and a second conductive layer is deposited over the second insulator layer. Then, a third conductive line is formed and disposed in the trench, the third conductive line overlying the second conductive barrier layer.

Dependencies are inferred from the claim text.