Low temperature cobalt silicidation process monitor
AssigneeAdvanced Micro Devices, Inc.
InventorDaniel Vincent Rowland
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Abstract
A method for monitoring temperature in a thermal processing system includes the steps of depositing (105) a cobalt film (104) on a semiconductor substrate (103) and performing thermal processing (108) on the substrate (103) to generate a cobalt silicide film (109). The method further includes measuring (110) a resistance characteristic of the cobalt silicide (109) and determining a temperature of the thermal processing using the resistance characteristic (112).
Claims5
A method for monitoring temperature in a thermal processing system, comprising the steps of:
- depositing a cobalt film on a semiconductor substrate;
- measuring a resistance characteristic of the cobalt film prior to generating a cobalt silicide;
- performing thermal processing on the substrate, thereby generating the cobalt silicide film;
- measuring a resistance characteristic of the cobalt silicide;
- and
- determining a temperature of the thermal processing using the resistance characteristic of the cobalt film and the cobalt silicide film, respectively.
A method for monitoring temperature in a thermal processing system, comprising the steps of:
- depositing a cobalt film on a semiconductor substrate;
- measuring a resistance characteristic of the cobalt film prior to generating a cobalt silicide;
- performing thermal processing on the substrate, thereby generating the cobalt silicide film;
- measuring a resistance characteristic of the cobalt silicide;
- and
- determining a temperature of the thermal processing using the resistance characteristic of the cobalt film and the cobalt silicide film, respectively, wherein the step of determining the temperature comprises:
- plotting the resistance characteristic of the cobalt silicide on a sheet resistance-temperature transformation plane;
- plotting the resistance characteristic of the cobalt film on the sheet resistance-temperature transformation plane;
- and
- determining the temperature from the transformation plane, thereby accounting for variations in the cobalt film resistance characteristic on the cobalt silicide resistance characteristic.
A method for monitoring temperature in a thermal processing system, comprising the steps of:
- depositing a cobalt film on a semiconductor substrate;
- measuring a resistance characteristic of the cobalt film prior to generating a cobalt silicide;
- performing thermal processing on the substrate, thereby generating the cobalt silicide film;
- measuring a resistance characteristic of the cobalt silicide;
- and
- determining a temperature of the thermal processing using the resistance characteristic of the cobalt film and the cobalt silicide film, respectively, wherein the step of determining the temperature comprises:
- plotting the resistance characteristic of the cobalt silicide on a sheet resistance-temperature transformation surface;
- plotting the resistance characteristic of the cobalt film on the sheet resistance-temperature transformation surface;
- and
- determining the temperature from the transformation surface, thereby accounting for variations in the cobalt film resistance characteristic on the cobalt silicide resistance characteristic.
Dependencies are inferred from the claim text.