Plate-through hard mask for MRAM devices
AssigneeInfineon Technologies AG
InventorXian J. Ning
Life of this patent
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Abstract
A method of fabricating an MRAM device includes patterning a magnetic stack material layer (142) using a herd mask (146) formed by a “plate-through” technique. A resist (144) is deposited over magnetic stack material (142), and the resist (144) is patterned, exposing regions of the magnetic stack material (142). A hard mask (146) is formed over the magnetic stack material (142) exposed regions through the resist (144), and the hard mask (146) is used to pattern magnetic tunnel junctions (MTJ's) of the MRAM device. Electroplating, electro-less plating, sputtering, physical vapor deposition (PVD), evaporation deposition, or combinations thereof are used to deposit a material comprising a metal over the magnetic stack material (142) exposed regions to form the hard mask (146).
Claims20
A method of fabricating a resistive semiconductor memory device, comprising:
- forming a plurality of first conductive lines;
- forming a magnetic stack material over the first conductive lines;
- depositing a resist over the magnetic stack material;
- patterning the resist;
- removing portions of the resist to expose regions of the magnetic stack material;
- depositing a hard mask material over the exposed regions of the magnetic stack material to form a hard mask;
- removing remaining portions of the resist;
- etching the magnetic stack material in a pattern aligned with the hard mask;
- and
- removing the hard mask.
A method of fabricating a magnetic random access memory (MRAM) device comprising:
- providing a workpiece;
- depositing a first insulating layer over the workpiece;
- forming a plurality of first conductive lines within the first insulating layer;
- depositing a magnetic stack material over the first conductive lines and first insulating layer;
- depositing a resist over the magnetic stack material;
- patterning the resist;
- removing portions of the resist to expose regions of the magnetic stack material;
- depositing a hard mask material over the exposed regions of the magnetic stack material through the resist to form a hard mask;
- removing the resist;
- using the hard mask to pattern the magnetic stack material and form magnetic tunnel junctions (MTJ's)
- forming a plurality of second conductive lines proximate the MTJ's;
- and
- removing the hard mask.
Dependencies are inferred from the claim text.