Method of strengthening photoresist to prevent pattern collapse
AssigneeAdvanced Micro Devices, Inc.
InventorsChristopher F. Lyons, Scott A. Bell, Todd Lukanc, Marina V. Plat
Life of this patent
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Abstract
There is provided a method for forming a photoresist layer for photolithographic applications which has increased structural strength. The photoresist layer is exposed through a mask and developed. The photoresist layer is then treated to change its material properties before the photoresist layer is dried. Also provided are a semiconductor fabrication method employing a treated photoresist and a composition for a treatable photoresist.
Claims19
A method of forming a photoresist layer, comprising the steps of:
- providing a surface;
- depositing a photoresist layer on the surface, the photoresist layer having material properties and comprising a matrix material, a photoactivated sensitizer material that is sensitized when exposed to radiation of a first wavelength, a solvent material, and a cross-linkable material capable of forming cross-links when exposed to radiation of a second wavelength in an ultraviolet range and different than the first wavelength;
- exposing the photoresist layer to radiation of the first wavelength through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer to remove the exposed area of the photoresist;
- and
- exposing the photoresist layer to radiation of the second wavelength while the photoresist layer is immersed in a liquid to change the material properties.
A method of making a semiconductor device, comprising the steps of:
- forming at least one semiconductor device on a substrate;
- forming an insulating layer over the semiconductor device;
- forming a photoresist layer over the insulating layer, the photoresist layer having material properties and comprising a matrix material, a photoactivated sensitizer material that is sensitized when exposed to radiation of a first wavelength, a solvent material, and a cross-linkable material capable of forming cross-links when exposed to radiation of a second wavelength in an ultraviolet range and which is different that the first wavelength;
- exposing the photoresist layer to radiation of the first wavelength through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer to form an opening in the photoresist layer by removing the exposed area of photoresist;
- exposing the photoresist layer to radiation of the second wavelength while the photoresist layer is immersed in a liquid to change the material properties;
- forming a narrow line in the insulating layer;
- and
- forming a conductive layer in the narrow line.
A method of making a device, comprising the steps of:
- providing a surface of the device;
- depositing a photoresist layer on the surface, the photoresist layer comprising a matrix material, a photoactivated sensitizer material that is sensitized when exposed to radiation of a first wavelength, a solvent material, and a cross-linkable material capable of forming cross-links when exposed to radiation of a second wavelength in an ultraviolet range and which is different than the first wavelength;
- exposing the photoresist layer to radiation of the first wavelength through a mask to create a sensitized area of photoresist and an unsensitized area of photoresist;
- developing the photoresist layer to remove a portion of the photoresist;
- exposing the developed photoresist layer to radiation of the second wavelength while the photoresist layer is immersed in a liquid to form cross-links in the cross-linkable material;
- and
- patterning the surface of the device after the step of exposing the developed photoresist layer to radiation of the second wavelength using the developed photoresist layer as a mask.
Dependencies are inferred from the claim text.