Optical proximity correction
AssigneeTexas Instruments Incorporated
InventorsJohn N. Randall, Thomas J. Aton, Shane R. Palmer
Life of this patent
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Abstract
An improvement to the optical proximity correction process used in photolithography. Mask pattern modeling is added to the optical proximity correction process, producing patterns that are optimized for both reticle manufacture and wafer fabrication. Pattern validation is improved by applying a mask pattern model and a wafer pattern model to the validation process. Reticle inspection is improved by adding a mask inspection tool model that comprehends the limitations of the inspection tool.
Claims15
A method of optical proximity correction, comprising the actions of:
- modeling the transfer of a design pattern to a reticle, to thereby produce a reticle pattern image;
- modeling the transfer of said reticle pattern image to a wafer, to thereby produce a wafer pattern image;
- generating a comparison of said wafer pattern image and a reference pattern;
- and
- modifying said design pattern if said step of generating a comparison fails to satisfy a set of design rules.
A method of validating a modified design pattern in optical proximity correction, comprising the actions of:
- modeling the transfer of said modified design pattern to a reticle, to thereby produce a reticle pattern image;
- modeling the transfer of said reticle pattern image to a wafer, to thereby produce a wafer pattern image;
- and
- generating a comparison of said wafer pattern image and a reference pattern.
A method of inspecting a reticle in optical proximity correction, comprising the actions of:
- modeling the transfer of a design pattern to a reticle, to thereby produce a reticle pattern image;
- modeling how said reticle pattern image will be resolved by a mask inspection tool, to thereby produce a reticle inspection image;
- generating a comparison of said reticle and said reticle inspection image.
A method of correcting design patterns for wafer fabrication, comprising the actions of:
- correcting for changes in said design pattern occurring during transfer of the pattern to the reticle;
- and
- correcting for changes in said design pattern occurring during transfer of the pattern to the wafer.
Dependencies are inferred from the claim text.