Overvoltage protection circuit for bidirectional transmission gate
AssigneeIntersil Americas Inc.
InventorsKent Aaron Ponton, James Winthrop Swonger
Life of this patent
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AssigneeIntersil Americas Inc.
InventorsKent Aaron Ponton, James Winthrop Swonger
Estimating the term…
A clamping MOS transistor-based overvoltage protection circuit is provided for a bidirectional transmission gate FET coupled between input and output ports. When the voltage applied to the input port exceeds the supply voltage by a MOS gate threshold, the clamping MOS transistor is turned on, pulling the voltage applied to the gate of the transmission gate FET very close to the applied overvoltage level by a voltage differential less than a diode drop. This reduction in Vgs of the transmission gate FET reduces its source-to-drain current, as the device operates deeper in a sub-threshold region, increasing the overvoltage rating for the same leakage current specification. In a second embodiment, a clamping MOS device is coupled on either side of the source-drain path of the transmission gate's FET device.
A transmission gate for controllably providing a conductivity path between a first port and a second port comprising:
A transmission gate for controllably providing a conductivity path between a first port and a second port comprising:
In a transmission gate for controllably providing a conductivity path between a first port and a second port, said transmission gate including a controlled switching device having a first input/output electrode coupled to said first port, a second input/output electrode coupled to said second port, a body coupled through a diode to a power supply terminal to which a supply voltage is applied, and a control electrode adapted to receive a control input for controlling conductivity between said first and second input/output electrodes, the improvement comprising:
Dependencies are inferred from the claim text.