X-ray reflectance system to determine suitability of SiON ARC layer
AssigneeAdvanced Micro Devices, Inc.
InventorsBhanwar Singh, Arvind Halliyal, Ramkumar Subramanian
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Abstract
One aspect of the present invention relates to a method to facilitate formation of an oxide portion of an anti-reflective layer on a substrate. The method involves the steps of forming an oxidized portion of an anti-reflective coating over an anti-reflective layer disposed on the substrate; reflecting a beam of x-ray radiation at the oxidized portion; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the oxidized portion based on the measurement signal while the oxidized portion is being formed at the substrate.
Claims19
A semiconductor processing system, comprising:
- a processing chamber operable to selectively oxidize a portion of an anti-reflective layer over an anti-reflective layer formed on a substrate located in the chamber;
- an x-ray scattering measurement system for in-situ measuring a thickness of the oxidized portion being formed and for providing a measurement signal indicative of the measured thickness;
- and
- a control system for controlling operating characteristics of the formation environment within the chamber, the control system adjusting the operating characteristics to control formation of the oxidized portion based on the measurement signal.
A method to facilitate formation of an oxide portion of an anti-reflective layer on a substrate using a semiconductor processing system, comprising:
- forming an oxidized portion of an anti-reflective coating over an anti-reflective layer disposed on the substrate;
- reflecting a beam of x-ray radiation at the oxidized portion;
- generating a measurement signal based on the reflected portion of the light beam;
- and
- determining a thickness of the oxidized portion based on the measurement signal while the oxidized portion is being formed at the substrate,
- the semiconductor processing system comprising:
- a processing chamber operable to selectively oxidize a portion of an anti-reflective layer over an anti-reflective layer formed on a substrate located in the chamber;
- an x-ray scattering measurement system for in-situ measuring a thickness of the oxidized portion being formed and for providing a measurement signal indicative of the measured thickness;
- and
- a control system for controlling operating characteristics of the formation environment within the chamber, the control system adjusting the operating characteristics to control formation of the oxidized portion based on the measurement signal.
The method of claim of 13, further comprising adjusting operating characteristics of formation of the oxidized portion to control formation of the oxidized portion as a function of the determined thickness.
Dependencies are inferred from the claim text.