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US 6,633,074 B2Granted
Integrated circuit wiring with low RC time delay
AssigneeMicron Technology, Inc.
InventorKie Y. Ahn
Life of this patent
Estimating the term…
Abstract
The present invention is directed to a semiconductor interconnect structure comprised of a promoter layer defining openings and a metal layer having a portion elevated above the substrate assembly and a portion that fills the openings. The metal layer is in electrical contact with the substrate assembly through the portion of the metal layer that fills the openings. The portion of the metal layer that fills the openings supports the elevated portion of the metal layer. A method of fabricating a semiconductor interconnect structure is also provided. A resist layer is patterned on a substrate assembly to define openings. A metal layer is deposited on the resist layer and into the openings, and the resist layer is removed to form a gap between the metal layer and the underlying substrate assembly.
Claims16
A semiconductor interconnect structure for a substrate assembly, comprising:
- a metal layer;
- a conductive column connected to the substrate assembly and the metal layer, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a bilayer adhesion promoter layer;
- and
- a metal plug in contact with the bilayer adhesion promoter layer, wherein the metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the substrate assembly;
- and
- an upper boundary defined by the metal layer.
9 more elements
A semiconductor interconnect structure for a substrate assembly, comprising:
- a metal layer;
- a conductive column connected to the substrate assembly and the metal layer, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a first bilayer adhesion promoter layer;
- a first metal plug in contact with the first bilayer adhesion promoter layer, wherein the first metal plug includes a planar top surface;
- a second bilayer adhesion promoter layer in contact with the first metal plug;
- and
- a second metal plug in contact with the second bilayer adhesion promoter layer, wherein the second metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the substrate assembly;
- and
- an upper boundary defined by the metal layer.
11 more elements
A semiconductor interconnect between an upper conductor and a lower conductor, comprising:
- a conductive column connected to the upper conductor and the lower conductor, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a bilayer adhesion promoter layer;
- and
- a metal plug in contact with the bilayer adhesion promoter layer, wherein the metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the lower conductor;
- and
- an upper boundary defined by the upper conductor.
8 more elements
A semiconductor interconnect between an upper conductor and a lower conductor, comprising:
- a conductive column connected to the upper conductor and the lower conductor, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a first bilayer adhesion promoter layer;
- a first metal plug in contact with the first bilayer adhesion promoter layer, wherein the first metal plug includes a planar top surface;
- a second bilayer adhesion promoter layer in contact with the first metal plug;
- and
- a second metal plug in contact with the second bilayer adhesion promoter layer, wherein the second metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the lower conductor;
- and
- an upper boundary defined by the upper conductor.
10 more elements
A semiconductor device, comprising:
- a substrate assembly;
- and
- an interconnect structure, wherein the interconnect structure includes:
- a metal layer;
- a conductive column connected to the substrate assembly and the metal layer, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a bilayer adhesion promoter layer;
- and
- a metal plug in contact with the bilayer adhesion promoter layer, wherein the metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the substrate assembly;
- and
- an upper boundary defined by the metal layer.
12 more elements
A semiconductor device, comprising:
- a substrate assembly;
- and
- an interconnect structure, wherein the interconnect structure includes:
- a metal layer;
- a conductive column connected to the substrate assembly and the metal layer, wherein the conductive column includes:
- a first end connected to the substrate assembly;
- a second end connected to the metal layer, wherein a cross-sectional area of the second end of the conductive column is greater than a cross-sectional area of the first end of the conductive column;
- a first bilayer adhesion promoter layer;
- a first metal plug in contact with the first bilayer adhesion promoter layer, wherein the first metal plug includes a planar top surface;
- a second bilayer adhesion promoter layer in contact with the first metal plug;
- and
- a second metal plug in contact with the second bilayer adhesion promoter layer, wherein the second metal plug includes a planar top surface;
- and
- an air gap surrounding the conductive column, wherein the air gap includes:
- a lower boundary defined by the substrate assembly;
- and
- an upper boundary defined by the metal layer.
14 more elements
Dependencies are inferred from the claim text.