Low-noise silicon controlled rectifier for electrostatic discharge protection

An integrated circuit device, comprising:

• a semiconductor substrate;
• a dielectric layer disposed over the semiconductor substrate;
• and
• a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, a second n-type portion contiguous with the second p-type portion, and a center portion disposed between the first n-type portion and the second p-type portion, wherein the first n-type portion is spaced apart from the second p-type portion.

An integrated circuit device, comprising:

• a semiconductor substrate;
• a dielectric layer disposed over the semiconductor substrate;
• and
• a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, a second n-type portion contiguous with the second p-type portion, and a third n-type portion contiguous with the first p-type portion,
• wherein the first p-type portion and the second p-type portion are contiguous with the dielectric layer.

An integrated circuit device, comprising:

• a semiconductor substrate;
• a dielectric layer disposed over the semiconductor substrate;
• and
• a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, a second n-type portion contiguous with the second p-type portion, and a third p-type portion contiguous with the second n-type portion,
• wherein the first n-type portion and the second n-type portion are contiguous with the dielectric later.

An integrated circuit device, comprising

• a semiconductor substrate;
• an isolation structure formed inside the semiconductor substrate;
• and
• a layer of silicon, formed over the isolation structure, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a center portion contiguous with the first n-type portion, a second p-type portion contiguous with the center portion, and a second n-type portion contiguous with the second p-type portion, wherein the first p-type portion, the second p-type portion, the center portion, the first n-type portion, and the second n-type portion overlap the isolation structure.

An integrated circuit device, comprising

• a semiconductor substrate;
• a well region formed inside the semiconductor substrate;
• a first isolation structure, formed inside the semiconductor substrate, contiguous with the well region;
• a second isolation structure, formed inside the semiconductor substrate, contiguous with well region and spaced apart from the first isolation structure;
• a dielectric layer disposed over the well region and the first and second isolation structures;
• and
• a layer of silicon, formed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, and a second n-type portion contiguous with the second p-type portion, wherein at least a portion of the first p-type and first n-type portions overlap the first isolation structure and at least a portion of the second p-type and second n-type portions overlap the second isolation structure.

An integrated circuit device, comprising:

• a semiconductor substrate;
• an insulator layer disposed over the semiconductor substrate;
• a first silicon layer disposed over the insulator layer, including
• a first isolation structure formed inside the first silicon layer, and
• a second isolation structure formed inside the first silicon layer and spaced apart from the first isolation structure;
• a dielectric layer disposed over the first silicon layer;
• and
• a second layer of silicon, disposed over the dielectric layer, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion, and a second n-type portion contiguous with the second p-type portion.