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US 6,632,743 B1Granted
Post-planarization, pre-oxide removal ozone treatment
AssigneeMicron Technology, Inc.
InventorsEric K. Grieger, Tim J. Kennedy, Robert H. Whitney, Gunnar A. Barnhart
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Abstract
Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching.
Claims20
A method of processing a wafer, the method comprising:
- providing a wafer having a polysilicon surface layer;
- planarizing the polysilicon surface layer by chemical mechanical planarization thereby contaminating the polysilicon surface layer with carbon;
- washing the wafer with an ozonated solution;
- acid etching the wafer after the ozone washing with a solution containing hydrofluoric acid to remove oxides from the polysilicon surface layer;
- and
- etching the polysilicon surface layer with a solution containing TMAH.
3 more elements
Dependencies are inferred from the claim text.