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US 6,632,725 B2Granted
Process for producing an epitaxial layer of gallium nitride by the HVPE method
AssigneesCentre National de la Recherche Scientifique (CNRS), Université Blaise Pascal
InventorsAgnès Trassoudaine, Robert Cadoret, Eric Aujol
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Abstract
A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
Claims22
A method of producing an epitaxial layer of gallium nitride on a substrate by hydride vapor(-phase epitaxy (HVPE), comprising:
- providing gallium nitride source gases to the substrate;
- providing an additional flow of HCl gas to the substrate;
- and
- maintaining classical negative relative supersaturation conditions during deposition of the gallium nitride layer.
1 more element
Dependencies are inferred from the claim text.