Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
AssigneesHitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
InventorsShinpei Iijima, Satoshi Yamamoto, Jun Kuroda, Hiroshi Miki, Yoshihisa Fujisaki, Tadanori Yoshida, Kenichi Yamaguchi
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Abstract
In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycrystalline silicon film by vapor phase diffusion in order to reduce the resistance of the lower electrode.
Claims20
A method of manufacturing a semiconductor integrated circuit device, which comprises:
- (a) depositing an amorphous silicon film and roughening surface of the amorphous silicon film;
- (b) after the step (a), heat treating the amorphous silicon film in a gas atmosphere containing an impurity element, thereby introducing the impurity element into the amorphous silicon film;
- and
- (c) after the step (b), crystallizing the silicon film thus roughened.
A method of manufacturing a semiconductor integrated circuit device, which comprises:
- (a) depositing an amorphous silicon film and roughening the surface of the amorphous silicon film;
- and
- (b) after the step (a), heat treating the silicon film in an impurity-element-containing gas atmosphere, thereby introducing the impurity element into the amorphous silicon film.
A method of manufacturing a semiconductor integrated circuit device comprising an MISFET formed on a semiconductor substrate and a capacitor electrically connected with a source drain region of the MISFET, which comprises:
- (a) forming an insulating film on the main surface of the semiconductor substrate;
- (b) forming an opening portion in the insulating film;
- (c) forming an amorphous silicon film on the insulating film including the inner wall surface of the opening portion;
- (d) roughening the surface of the amorphous silicon film;
- (e) after the step (d), introducing an impurity into the amorphous silicon film having a roughened surface by a vapor phase method;
- (f) removing a portion of the amorphous silicon film having the impurity introduced therein and forming a first electrode of the capacitor inside of the opening portion;
- (g) forming a dielectric film over the first electrode of the capacitor at a heat treating temperature;
- and
- (h) forming a second electrode of the capacitor over the dielectric film.
Dependencies are inferred from the claim text.