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US 6,632,576 B2Granted
Optical assist feature for two-mask exposure lithography
AssigneeIntel Corporation
InventorEdita Tejnil
Life of this patent
Estimating the term…
Abstract
The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
Claims15
A set of masks comprising:
- a first mask comprising:
- a first transparent region;
- and
- a first opaque region, said first opaque region disposed adjacent to said first transparent region;
- and
- a second mask comprising:
- a second transparent region, said second transparent region having a first phase;
- a second opaque region, said second opaque region disposed adjacent to said second transparent region;
- a third transparent region, said third transparent region having a second phase, said third transparent region disposed adjacent to said second opaque region;
- and
- a transparent assist feature disposed adjacent to said second opaque region, wherein said transparent assist feature will fit within said first transparent region when said second mask and said first mask are aligned.
8 more elements
A set of masks comprising:
- a binary mask comprising a product feature, said product feature including a narrow space;
- and
- a phase-shifting mask comprising an assist feature, said assist feature fitting within said narrow space when said phase-shifting mask and said binary mask are aligned.
Dependencies are inferred from the claim text.