Silicon wafer and method for producing silicon single crystal
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsRyoji Hoshi, Izumi Fusegawa, Tomohiko Ohta, Shigemaru Maeda
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Abstract
The present invention provides a silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that V-rich region should become dominant, wherein count number of particles having a size of 0.1 μm or more is 1 count/cm2 or less when particles are counted by using a particle counter and a method for producing a silicon single crystal. Thus, there is provided a production technique that can improve productivity and reduce cost for high quality silicon wafers of excellent device characteristics by further reducing density and size of defects such as COP.
Claims20
A silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that a V-rich region should become dominant, wherein a count number of particles having a size of 0.1 μm or more is 1 count/cm2 or less when particles are counted by using a particle counter.
A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is grown with a time L/F (min) of 0.28/(F/G−0.225)2 min or less for passing a temperature region of from 1150° C. to 1080° C. and F/G of 0.22 mm2/K·min or more, which are calculated from a temperature gradient G (K/mm) at a crystal center along a crystal pulling axis direction from the melting point of silicon to 1400° C., a length L (mm) of the temperature region of from 1150° C. to 1080° C. and a crystal growth rate F (mm/min).
Dependencies are inferred from the claim text.