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US 6,617,663 B2Granted
Methods of manufacturing semiconductor devices
AssigneeSeiko Epson Corporation
InventorsTomokazu Horie, Shinichi Sugiyama
Life of this patent
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Abstract
A planarization method includes forming a dummy pattern in a film over a substrate. The dummy pattern includes a plurality of concave and convex portions. A chemical-mechanical polishing process is applied to the film, with the dummy pattern providing planarization of enhanced uniformity in comparison with known techniques.
Claims29
A method of manufacturing a semiconductor device comprising:
- forming a trench in a substrate which has a first region and a second region larger than the first region, wherein the trench is provided between the first region and the second region for isolating the first region and the second region;
- forming an insulating film on the substrate and in the trench;
- forming a dummy pattern which includes a plurality of concave and convex portions in the insulating film on the second region;
- and
- planarizing the insulating film by a chemical-mechanical polishing.
2 more elements
A method for semiconductor device manufacturing, the method comprising:
- forming a platform region;
- forming a dummy pattern in the platform region, the dummy pattern having a plurality of regions of differing heights;
- and
- then conducting chemical-mechanical polishing of the platform region.
1 more element
A manufacturing method, comprising:
- providing a substrate;
- forming a mask pattern over the substrate;
- etching the substrate through the mask pattern;
- forming a film over the substrate, wherein the film includes a platform region having a height greater than the height of another region of the film;
- forming a dummy pattern in the platform region of the film,
- wherein the dummy pattern includes regions having differing heights;
- and
- then performing a chemical-mechanical polishing process on the film in the region of the dummy pattern.
5 more elements
Dependencies are inferred from the claim text.