Semiconductor device having a trench isolation structure
AssigneeSamsung Electronics Co., Ltd.
InventorTai-Su Park
Life of this patent
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Abstract
A device isolation structure in a semiconductor device and a method for fabricating the same are disclosed. A trench is formed in a semiconductor substrate to confine a plurality of active regions, an insulating material is deposited to fill the trench and the insulating material having a portion extending from the trench to above the semiconductor substrate, and a trench oxidation preventive film is formed on the insulating material. The semiconductor device preferably further includes a gate line extending in one direction on the semiconductor substrate having the trench oxidation-preventive film, and a sidewall spacer formed a sidewall of the gate line, wherein the trench oxidation-preventive film is disposed on the insulating material and disposed under the gate line and the sidewall spacer.
Claims4
A semiconductor device comprising:
- a trench formed in a semiconductor substrate to confine a plurality of active regions;
- an insulating material deposited to fill the trench and the insulating material having a portion extending from the trench to above the semiconductor substrate;
- a trench oxidation-preventive film formed on the insulating material;
- a gate line extending in one direction on the semiconductor substrate having the trench oxidation-preventive film;
- and
- a sidewall spacer formed on a sidewall of the gate line, wherein the trench oxidation-preventive film is disposed on the insulating material and disposed under the gate line and the sidewall spacer.
Dependencies are inferred from the claim text.