High voltage component and method for making same
AssigneeRobert Bosch GmbH
InventorsHartmut Michel, Bernd Bireckoven, Dirk Hoheisel, Ning Qu
Life of this patent
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Abstract
A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semiconductor wafer. The partial components switch through, for example, at a given voltage applied between a first bridge cathode and an anodic metallization.
Claims6
A high-voltage component disposed on an n-doped semiconductor wafer that is a self-supporting component part, comprising:
- a plurality of partial components connected in series, at least one of the plurality of partial components including a p-area extending from a front side of the wafer to a back side of the wafer;
- a planar p-doped well embedded in an n-doped area of the wafer;
- and
- a heavily n-doped strip embedded in the p-doped well;
- wherein a bridge connects the heavily n-doped strip to the p-area, and wherein the p-doped well is conjoined with the p-area by a p-doped area.
A high-voltage component disposed on an n-doped semiconductor wafer that is a self-supporting component part, comprising:
- a plurality of partial components connected in series, at least one of the plurality of partial components including a p-area extending from a front side of the wafer to a back side of the wafer;
- a planar p-doped well embedded in an n-doped area of the wafer;
- a heavily n-dopes strip embedded in the p-doped well, wherein a bridge connects the heavily n-doped strip to the p-area;
- and
- and element including one of a cathode metallization and a bridge cathode, the element contacting the p-doped well and the p-area together.
A high-voltage component disposed on an n-doped semiconductor wafer that is a self-supporting component part, comprising:
- a plurality of partial components connected in series, at least one of the plurality of partial components including a p-area extending from a front side of the wafer to a back side of the wafer;
- a planar p-doped well embedded in an n-doped area of the wafer;
- and
- a heavily n-doped strip embedded in the p-doped well;
- wherein a bridge connects the heavily n-doped strip to the p-area, and wherein the back side of the wafer comprises alternating p-doped and weakly n-doped areas.
A high-voltage component disposed on an n-doped semiconductor wafer that is a self-supporting component part, comprising:
- a plurality of partial components connected in series, at least one of the plurality of partial components including a p-area extending from a front side of the wafer to a back side of the wafer;
- a planar p-doped well embedded in an n-doped area of the wafer;
- and
- a heavily n-doped strip embedded in the p-doped well;
- wherein a bridge connects the heavily n-doped strip to the p-area, and wherein the back side of the wafer in contact with an oxide layer comprises alternating p-doped and weakly n-doped areas.
Dependencies are inferred from the claim text.