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US 6,617,658 B2Granted
Semiconductor memory device including magneto resistive element
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
Life of this patent
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Abstract
A semiconductor memory device includes a semiconductor substrate, and a first magneto resistive element separated from the semiconductor substrate, and including a first magnetic layer and a first nonmagnetic layer. The first magnetic layer and the first nonmagnetic layer are formed in a direction perpendicular to the semiconductor substrate.
Claims30
A semiconductor memory device comprising:
- a semiconductor substrate;
- and
- a first magneto resistive element separated from said semiconductor substrate, said first magneto resistive element comprising a first magnetic layer and a first nonmagnetic layer, said first magnetic layer and said first nonmagnetic layer being formed in a direction perpendicular to said semiconductor substrate.
Dependencies are inferred from the claim text.