EDMOS device having a lattice type drift region

An EDMOS device having a lattice type drift region, comprising:

• a well region formed in a given region of a silicon substrate;
• a lattice type drift region formed in a given region of said well region and composed of a first lattice and a second lattice alternately arranged;
• a field oxide film formed on said silicon substrate and overlapped with a portion of said well region or a portion of said well region and said drift region;
• a drain region formed within a given region of said drift region;
• a diffusion region formed below said drain region;
• a source region and a source contact region formed in said well region;
• a gate electrode formed on said silicon substrate of said well region, wherein a gate insulating film is intervened between said gate electrode and said silicon substrate;
• a source electrode connected to said source region and said source contact region via a contact hole formed in an insulating film;
• and
• a drain electrode connected to said drain region via a contact hole formed in said insulating film.