Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes
AssigneeIndustrial Technology Research Institute
InventorsChyh-Yih Chang, Ming-Dou Ker
Life of this patent
Estimating the term…
Abstract
An integrated circuit device that includes a plurality of electrostatic discharge clamp circuits, variously coupled to VDD, VSS and transistor, having at least one bi-directional silicon diode that includes a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, responsive to either a positive electrostatic discharge or a negative electrostatic discharge to provide electrostatic discharge protection.
Claims28
An electrostatic discharge protection circuit, comprising:
- at least one bi-directional silicon diode having a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, and
- wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge.
An electrostatic discharge protection circuit, comprising:
- at least one bi-directional silicon diode having a first silicon-on-insulator diode and a second silicon-on-insulator diode, wherein an n-type portion of the first silicon-on-insulator diode is coupled to a p-type portion of the second silicon-on-insulator diode and a p-type portion of the first silicon-on-insulator diode is coupled to an n-type portion of the second silicon-on-insulator diode, and
- wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge.
An integrated circuit, comprising:
- a signal pad;
- a first voltage source;
- and
- a first electrostatic discharge clamp circuit, coupled to the first voltage source, having at least one bi-directional silicon diode including a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, and
- wherein the at least one bi-directional silicon diode is responsive to one of a positive electrostatic discharge or a negative electrostatic discharge.
Dependencies are inferred from the claim text.