RuSixOy-containing adhesion layers and process for fabricating the same

#1. Field of the Invention

#The present invention relates to semiconductor devices and the fabrication thereof. More particularly, the present invention pertains to RuSixOy-containing adhesion layers, structures incorporating such adhesion layers, and methods of fabricating the same.

#2. State of the Art

#The present invention will be better understood from reading the following detailed description taken in conjunction with the accompanying drawings, wherein:

#FIG. 1 shows a device structure including a RuSixOy-containing adhesion layer according to the present invention;

#FIGS. 2-4 show one method of forming the RuSixOy-containing adhesion layer according to the present invention;

#Referring to FIG. 1, a structure 20 according to the present invention includes a substrate assembly 21 and a RuSixOy-containing adhesion layer 23 disposed on a surface 22 of the substrate assembly 21, e.g., a silicon-containing substrate. The structure 20 further includes a conductive layer 24. As used herein, “substrate assembly” refers to either a semiconductor substrate such as the base semiconductor layer (e.g., base silicon layer of a wafer), a silicon layer deposited on another material (e.g., silicon on sapphire), or a semiconductor substrate having one or more layers, structures, and/or regions formed thereon or therein. It is understood that reference to a substrate assembly herein also includes any known process steps that may have been previously used to form or define regions, junctions, various structures or features, and openings (e.g., vias, contact openings, high aspect ratio openings, etc.).

#The structure 20 is representative of a RuSixOy-containing adhesion layer that may be used for any application requiring an effective adhesion layer, for example, to adhere two adjacent layers together, prevent delamination of films in a semiconductor structure, and to prevent oxidation of an underlying Si contact. The RuSixOy-containing adhesion layer 23 may be used in the fabrication of semiconductor devices or assemblies where it is necessary or desirable to enhance or ensure adhesion of one material to an adjacent material. As described more fully hereinafter, the RuSixOy-containing adhesion layer 23 may include Ru and/or RuSix, in addition to RuSixOy.

#The substrate assembly 21 may, for example, be representative of a contact structure having an opening extending to a silicon-containing surface. In such a structure, adhesion layers are commonly used within the contact opening to prevent undesirable reactions, such as reactions between the conductive contact material and the silicon-containing surface that lead to erosion of one or both such layers and a general lack of adhesion between the contact and silicon-containing materials. By way of example, the RuSixOy-containing adhesion layer 23 may be interposed between other layers of materials (e.g., ruthenium oxide, platinum, etc.) forming an electrode of a capacitor.