Structure for a selective epitaxial HBT emitter

Abstract

According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example, the epitaxial emitter may be N-type single-crystal silicon. The heterojunction bipolar transistor further comprises an etch stop layer situated on the top surface of the base, where the etch stop layer is in contact with the epitaxial emitter. The heterojunction bipolar transistor further comprises a first spacer and a second spacer situated on the etch stop layer, where the epitaxial emitter is situated between the first and second spacer. The first spacer and the second spacer, for example, may be LPCVD silicon nitride. The heterojunction bipolar transistor further comprises a dielectric layer deposited on the first and second spacers. The heterojunction bipolar transistor further comprises an antireflective coating layer deposited over the dielectric layer.

Dependencies are inferred from the claim text.