Nonvolatile memory cell and method for producing the memory cell

A non-volatile memory cell, comprising:

• a substrate having a source region, a drain region, and a channel;
• a gate stack formed by a first gate oxide, a storage electrode, a second gate oxide and a gate electrode, said first gate oxide configured on said substrate above said channel, said storage electrode configured above said first gate oxide, said second gate oxide configured above said storage electrode, said gate electrode configured on said second gate oxide;
• an interspace formed below said storage electrode;
• said interspace formed above a region selected from the group consisting of said source region and said drain region;
• said interspace being in a state selected from the group consisting of a gas-containing state and a vacuum-containing state;
• and
• an outer spacing web having doped silicon and configured laterally adjacent said gate stack and said interspace, said outer spacing web separated from said gate and storage electrodes and contacting one of said source region and said drain region.