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US 6,617,553 B2Granted
Multi-zone resistive heater
AssigneeApplied Materials, Inc.
InventorsHenry Ho, Anqing Cui, Xiaoxiong Yuan
Life of this patent
Estimating the term…
Abstract
A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.
Claims62
An apparatus comprising:
- a stage comprising a surface having an area to support a wafer and a body;
- a shaft coupled to the stage;
- a first heating element disposed within a first plane of the body of the stage;
- and
- a second heating element disposed within a second plane of the body of the stage that is a greater distance from the surface of the stage than the first plane of the body,
- wherein the second heating element is offset from the first heating element in a plane substantially parallel to the first plane of the body.
3 more elements
A reactor comprising:
- a chamber;
- and
- a resistive heater comprising a stage disposed within the chamber including a surface having an area to support a wafer and a body, a shaft coupled to the stage, a first heating element disposed within a first portion of the area of the stage and within a first plane of the body of the stage, and a second heating element disposed within a second portion of the area of the stage and in a second plane of the body of the stage, the second plane of the body of the heater is a greater distance from the surface of the stage than the first plane of the body,
- wherein a power density of the first heating element is greater than a power density of the second heating element in an area corresponding with a first portion of the stage area and the power density of the first heating element is less than the power density of the second heating element in an area corresponding with a second portion of the stage area,
- further wherein the second heating element is offset from the first heating element in a plane substantially parallel to the first plane of the body of the stage.
2 more elements
A heating system for a chemical vapor deposition apparatus comprising:
- a resistive heater comprising a stage including a surface having an area to support a wafer and a body, a shaft coupled to the stage, a first heating element disposed within a first plane of the body of the stage, and a second heating element disposed within a second plane of the body of the stage, the second plane of the body of the heater is a greater distance from the surface of the stage than the first plane of the body, wherein the second heating element is offset from the first heating element in a plane substantially parallel to the first plane of the body of the stage;
- a first temperature sensor disposed within the shaft positioned to measure a first temperature of the stage;
- and
- a power source coupled to the first heating element and the second heating element.
1 more element
A method comprising:
- supplying a power to a first resistive heating element disposed within a first plane of the body of a stage of a resistive heater and a second resistive heating element disposed within a second plane of the body of the stage, wherein the second heating element is offset from the first heating element in a third plane substantially parallel to at least one of the first plane and the second plane;
- and
- varying a resistance of at least one of the first resistive heating element and the second resistive heating element in at least two areas of the stage.
A method comprising:
- providing a resistive heater in a chamber of a reactor, the resistive heater comprising a stage disposed within the chamber including a surface having an area to support a wafer and a body, a first heating element having a first power density and a second power density, the first heating element formed within a first plane of the body of the stage, and a second heating element having a first power density and a second power density, the second heating element formed within a second plane of the body of the stage, the second plane disposed at a greater distance from the surface than the first heating element, wherein the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane;
- and
- supplying a power to the first heating element and to the second heating element.
Dependencies are inferred from the claim text.