Method of processing a semiconductor wafer in a reaction chamber with a rotating component
AssigneeASM America, Inc.
InventorDennis L. Goodwin
Life of this patent
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Abstract
A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.
Claims16
A method for processing a semiconductor wafer, comprising:
- inserting a wafer to be processed into a reaction chamber;
- directing heat into the chamber toward the wafer;
- introducing at least one processing gas into the chamber for deposition onto the wafer;
- and
- rotating first and second reflectors relative to the wafer about a common axis extending through centers of each of the reflectors and the wafer while holding the wafer stationary to create a more uniform deposition onto the wafer.
A method for processing a semiconductor wafer, comprising:
- inserting a wafer to be processed into a reaction chamber;
- directing heat into the chamber toward the wafer;
- introducing at least one processing gas into the chamber for deposition onto the wafer;
- rotating a first reflector relative to the wafer while holding the wafer stationary to create a more uniform deposition onto the wafer;
- and
- providing a second reflector located outside the chamber to reflect heat toward the wafer;
- wherein the first reflector and the second reflector are located outside opposite sides of the chamber and rotate about a common axis.
A method for processing a semiconductor wafer, comprising:
- inserting a wafer to be processed into a reaction chamber;
- reflecting radiant heat into the chamber toward the wafer from a radiant heat source located above or below the chamber;
- introducing processing gases into the chamber;
- directing the processing gases through a plurality of apertures provided over the wafer;
- and
- rotating the plurality of apertures while directing the processing gases therethrough to uniformly distribute processing gases over the wafer.
A method for processing a semiconductor wafer, comprising:
- placing a wafer on a support structure in a reaction chamber;
- introducing processing gases into the chamber to be deposited over the wafer;
- and
- rotating the chamber about the wafer and the support structure to uniformly distribute the processing gases onto the wafer.
Dependencies are inferred from the claim text.