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US 6,617,239 B1Granted
Subtractive metallization structure and method of making
AssigneeMicron Technology, Inc.
InventorPaul A. Farrar
Life of this patent
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Abstract
A subtractive metallization structure with a plurality of low dielectric constant insulating layers acting as etch stops is disclosed. The selected low dielectric constant materials have similar methods of formation and similar capacities to withstand physical and thermal stress. In addition, the etchant used for each low dielectric constant insulating layer has a very small etching rate relative to the other low dielectric constant insulating layers.
Claims29
A method of forming a metallization structure, said method comprising the steps of:
- forming a first opening through a first insulating layer comprising a first low dielectric constant material;
- forming a barrier layer on sidewalls defining said first opening;
- providing a first conductive material over and in contact with at least a portion of said first insulating layer and in said first opening, and patterning said first conductive material to form a first conductive pattern;
- forming a second opening through a second insulating layer which is provided over said first insulating layer and said first conductive pattern, wherein said second insulating layer comprises a second low dielectric constant material, said first and second low dielectric constant materials being different and being selectively etchable relative to each other;
- and
- providing a second conductive material in said second opening.
3 more elements
A method of forming a metallization structure, said method comprising the steps of:
- forming a SILK insulating layer over a substrate;
- providing a barrier layer on sidewalks defining a first opening formed within said SILK insulating layer;
- proving a first conductive material in said first opening;
- forming a NANOGLASS insulating layer in contact with said SILK insulating layer and said first conductive material;
- forming a second opening within said NANOGLASS insulating layer and extending said second opening to said first conductive material;
- and
- providing a second conductive material in said second opening.
4 more elements
Dependencies are inferred from the claim text.