Semiconductor device and method for fabricating the same using damascene process
AssigneeHynix Semiconductor Inc.
InventorsHeung Jae Cho, Dea Gyu Park
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Abstract
A semiconductor device and a method for fabricating the semiconductor device using a damascene process are disclosed. The method includes forming an Al2O3 film over a dummy gate disposed over a semiconductor substrate. Next, the dummy gate and a portion of the Al2O3 film are removed to form a groove defined by remains of the Al2O3 film and the semiconductor substrate. Then, a subsequent film is deposited within the groove, and a gate material is formed over the second film to complete the semiconductor device.
Claims15
A method for fabricating a semiconductor device using a damascene process, comprising the steps of:
- forming a dummy gate electrode on a semiconductor substrate;
- forming an Al2O3 film over the dummy gate electrode and the semiconductor substrate by depositing an AlON film over the substrate and
- then thermally treating the AlON film to thereby form the Al2O3 film;
- polishing and planarizing the Al2O3 film to expose the dummy gate electrode;
- etching the dummy gate electrode to form a groove therein;
- forming an insulating film on a surface of the groove;
- and
- forming a gate electrode on the insulating film in the groove.
A method for fabricating a semiconductor device using a damascene process, comprising the steps of:
- forming a dummy gate on a semiconductor substrate, the dummy gate including a dummy gate insulating film and a dummy gate electrode;
- forming an oxide film over the semiconductor substrate using an LDD oxidation process;
- wet-etching the oxide film, wherein the dummy gate insulating film is etched to have a selected slope during wet-etching of the oxide film;
- forming an Al2O3 film over the semiconductor substrate and the dummy gate;
- forming source and drain regions in the semiconductor substrate;
- activating the source and drain regions;
- forming an interlayer insulating film over the substrate;
- polishing the interlayer insulating film and the Al2O3 film using a Chemical Mechanical Polishing process to expose the dummy gate electrode;
- etching the dummy gate electrode and the dummy gate insulating film in sequence to form a groove defining a gate electrode region;
- forming a gate insulating film on a surface of the groove;
- and
- forming a doped polysilicon film or a gate metal film on the gate insulating film in the groove.
A method of fabricating a semiconductor device using a damascene process, comprising the steps of:
- forming a dummy gate on a semiconductor substrate, the dummy gate including a dummy gate insulating film and a dummy gate electrode;
- forming an oxide film over the semiconductor substrate using an LDD oxidation process;
- wet-etching the oxide film, wherein the dummy gate insulating film is etched to have a selected slope during wet-etching of the oxide film;
- depositing an AlON over the semiconductor substrate;
- heat-treating the semiconductor substrate to transform the AlON film into an Al2O3 film;
- performing low concentration impurity implantation into the semiconductor substrate to form an LDD region in the substrate;
- forming spacers on sidewalls of the dummy gate;
- performing high concentration impurity implantation into the semiconductor substrate to form a source/drain region;
- heat-treating the substrate to activate the implanted impurity ions;
- forming an interlayer insulating film over the semiconductor substrate;
- polishing the interlayer insulating film and the Al2O3 film using a Chemical Mechanical Polishing process to expose the dummy gate electrode;
- etching the dummy gate electrode and the dummy gate insulating film in sequence to form a groove defining a gate electrode region;
- forming a gate insulating film on a surface of the groove;
- and
- forming a doped polysilicon film or a gate metal film on the gate insulating film in the groove, thereby forming a gate of the semiconductor device.
Dependencies are inferred from the claim text.