Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors
AssigneesAgilent Technologies, Inc., Texas Instruments Incorporated, Applied Materials, Inc.
InventorsSanjeev Aggarwal, Kaushal K. Singh
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Abstract
A method is provided for ferroelectric layer testing. An adhesion layer is deposited over a semiconductor substrate to be of a phase pure material lacking a first material. A lower electrode is deposited over the adhesion layer and a ferroelectric layer is deposited over the lower electrode. The ferroelectic layer contains the first material. The ferroelectric layer is x-rayed and the x-ray fluorescence from the ferroelectric layer is detected for characterizing the ferroelectric layer.
Claims20
A method for ferroelectric layer testing comprising:
- depositing an adhesion layer over a semiconductor substrate, the adhesion layer deposited to be of a phase pure material lacking a first material;
- depositing a lower electrode over the adhesion layer;
- depositing a ferroelectric layer over the lower electrode, the ferroelectic layer containing the first material;
- x-raying the ferroelectric layer;
- and
- detecting the x-ray fluorescence from the ferroelectric layer for characterizing the ferroelectric layer.
A method for ferroelectric layer testing comprising:
- providing a silicon substrate;
- depositing an oxide layer over the silicon substrate;
- depositing an aluminum-based adhesion layer over the oxide layer, the aluminum-based adhesion layer deposited to be of a phase pure material lacking a first material;
- depositing a lower electrode over the aluminum-based adhesion layer;
- depositing a ferroelectric layer over the lower electrode, the ferroelectic layer containing the first material;
- x-raying the ferroelectric layer;
- and
- detecting the x-ray fluorescence from the ferroelectric layer for characterizing the ferroelectric layer.
Dependencies are inferred from the claim text.