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US 6,617,086 B2Granted
Forming a pattern of a negative photoresist
AssigneeInternational Business Machines Corporation
InventorsMarie Angelopoulos, Edward D. Babich, Inna V. Babich, Katherina E. Babich, James J. Bucchignano, Karen E. Petrillo, Steven A. Rishton
Life of this patent
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Abstract
A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
Claims21
A structure comprising a substrate and a layer of a patterned negative photoresist on the substrate wherein the patterned negative photoresist is obtained by crosslinking a polymer having at least one recurring group represented by the formula 1:
- wherein R is selected from the group consisting of H, CH3, alkyl, and CH2Si(CH3)3;
- R′ is selected from the groups consisting of
- —(CH2CH2O)mR″,
- alkyl, cycloalkyl and aryl,
- wherein m is an integer of about 1 to about 10;
- R″ is alkyl, cycloalkyl or aryl;
- wherein
- n is an integer of about 5 to about 104.
5 more elements
Dependencies are inferred from the claim text.