Method of correcting mask patterns
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Usui, Koji Hashimoto
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Abstract
A mask pattern correction method, a photomask produced according to the method, and a storage medium storing a program to execute the method are disclosed. The method includes preparing pattern density-based correction data according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns, obtaining design patterns for a correction target area defined on a mask, calculating a density of the design patterns in the correction target area, retrieving correction data corresponding to the calculated density from the prepared pattern density-based correction data, and correcting the design patterns for the correction target area according to the retrieved correction data.
Claims30
A method of correcting mask patterns, comprising:
- preparing pattern density-based correction data according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- obtaining design patterns for a correction target area defined on a mask;
- calculating a density of the design patterns for the correction target area;
- retrieving correction data corresponding to the calculated density from the prepared pattern density-based correction data;
- and
- correcting the design patterns for the correction target area according to the retrieved correction data.
A method of correcting mask patterns, comprising:
- preparing pattern density-based correction data according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- obtaining design patterns for an exposure shot area defined on a mask;
- calculating a density of design patterns for a discrete circuit block requiring a highest pattern size accuracy in the exposure shot area;
- retrieving correction data corresponding to the calculated density from the prepared pattern density-based correction data;
- and
- correcting the design patterns for the exposure shot area according to the retrieved correction data.
A method of correcting mask patterns, comprising:
- preparing pattern density-based correction data according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- obtaining design patterns for a correction target area defined on a mask and design patterns for a peripheral area defined around the correction target area;
- calculating a density of the design patterns for the correction target area and a density of the design patterns for the peripheral area;
- calculating an effective pattern density for the correction target area according to the calculated two densities;
- retrieving correction data corresponding to the effective pattern density from the prepared pattern density-based correction data;
- and
- correcting the design patterns for the correction target area according to the retrieved correction data.
A computer-readable memory storing a program for executing a method of correcting mask patterns, the program comprising:
- reading design patterns for a correction target area defined on a mask;
- calculating a density of the design patterns for the correction target area;
- retrieving correction data corresponding to the calculated density from pattern density-based correction data prepared in advance according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- and
- correcting the design patterns for the correction target area according to the retrieved correction data.
A computer-readable memory storing a program for executing a method of correcting mask patterns, the program comprising:
- reading design patterns for a correction target area defined on a mask;
- calculating a density of design patterns for a circuit block requiring a highest pattern accuracy in the correction target area;
- retrieving correction data corresponding to the calculated density from pattern density-based correction data prepared in advance according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- and
- correcting the design patterns for the correction target area according to the retrieved correction data.
A computer-readable memory storing a program for executing a method of correcting mask patterns, the program comprising:
- obtaining design patterns for a correction target area defined on a mask and design patterns for a peripheral area defined around the correction target area;
- calculating a density of the design patterns for the correction target area and a density of the design patterns for the peripheral area;
- calculating an effective pattern density for the correction target area according to the calculated two densities;
- retrieving correction data corresponding to the effective pattern density from pattern density-based correction data prepared in advance according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns;
- and
- correcting the design patterns for the correction target area according to the retrieved correction data.
Dependencies are inferred from the claim text.