Method for improving process window in semi-dense area by using phase shifter
AssigneeUnited Microelectronics Corp.
InventorsChih-Yung Lin, Chien-Wen Lai
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Abstract
In accordance with the present invention, a method is provided for improving process window in semi-dense area by using a phase shifter. This method comprises a step of providing a transparent substrate. Then, at least two opaque regions are formed on the substrate. A phase shifter is formed in the substrate, wherein the phase shifter is formed in-between adjacent opaque regions. As a result, the phase shifter shifts the incident beam at an angle that reduces the proximity effect and improves the optical contrast and the depth of focus (DOF) to get wider process window.
Claims17
A method for making a phase shift mask, said method comprising:
- providing a transparent substrate;
- forming at least two opaque regions on said transparent substrate;
- and
- forming a phase shifter with a depth in said transparent substrate, wherein said phase shifter is located between adjacent said opaque regions, and said depth of said phase shifter shifts an incident light about 60 degrees.
A method for making a phase shift mask, said method comprising:
- providing a quartz substrate;
- forming at least two chromium regions each having a line pattern on said quartz substrate;
- and
- forming a phase shifter with a depth in said quartz substrate, wherein said phase shifter is located between adjacent said chromium regions, and said depth of said phase shifter shifts an incident light about 60 degrees.
A method for making a phase shift mask, said method comprising:
- providing a quartz substrate;
- forming at least two chromium regions each having line pattern on said quartz substrate;
- forming a patterned resist mask on said quartz substrate, wherein said patterned resist mask defines a phase shifter with a depth on said quartz substrate, and said depth of said phase shifter shifts an incident light about 60 degrees and
- etching a portion of said quartz substrate to form said phase shifter with said depth in said quartz substrate using said resist mask, wherein said phase shifter is formed in-between adjacent said chromium regions.
A method for making a phase shift mask, said method comprising:
- providing a quartz substrate;
- forming at least two chromium regions each having a line pattern on said quartz substrate;
- forming a patterned resist mask on said quartz substrate, wherein said patterned resist mask defines a phase shifter with a depth on said quartz substrate, and said depth of said phase shifter shifts an incident light about 60 degrees;
- and
- etching a portion of said quartz substrate to form said phase shifter with said depth in said quartz substrate using said resist mask, wherein said phase shifter is formed in-between adjacent said chromium regions, and the edge to each side is about 0.1 um.
Dependencies are inferred from the claim text.