Synthesis of metal oxide and oxynitride
AssigneeAir Products and Chemicals, Inc.
InventorsYoshihide Senzaki, Arthur Kenneth Hochberg, Kirk Scott Cuthill
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Abstract
A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM[η2—R6N═C (R7)(R8)]y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W or Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.
Claims17
A method for producing a material selected from the group consisting of a metal oxynitride and mixtures thereof, wherein the metal is tantalum, niobium, molybdenum or tungsten, on a substrate, comprising;
- reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM(η2—R6N═C (R7)(R8)y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually areyl C1-6 alkyl or hydrogen, M═Ta, Nb, W, Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2.
A chemical vapor deposition method for producing a material selected from the group consisting of tantalum oxide, tantalum oxynitride and mixtures thereof on a silicon substrate comprising reacting a first reactant selected from the group consisting of ((CH3CH2)2N)3Ta═NCH2CH3, ((CH3CH2)2 N)3Ta(η2—CH3CH2N═CH(CH3) and mixtures thereof with an oxidant selected from the group consisting of oxygen, ozone, water, hydrogen peroxide, nitrous oxide and mixtures thereof and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl, hydrazine, N 2 and mixtures thereof, to produce said material on said silicon substrate.
A chemical vapor deposition method for producing tantalum oxide on a silicon substrate comprising reacting a first reactant selected from the group consisting of ((CH3CH2)2N)3Ta═NCH2CH3, ((CH3CH2)2N)3Ta(Taη2—CH3CH2N═CH3)) thereof with an oxidant selected from the group consisting of oxygen, ozone, water, hydrogen peroxide, nitrous oxide and mixtures thereof to produce said tantalum oxide on said silicon substrate.
A method for producing a mixed metal compound on a substrate comprising:
- (1) a material selected from the group consisting of a metal oxide, metal oxynitride and mixtures thereof, wherein the metal is tantalum, niobium, molybdenum or tungsten, formed by reacting a first reactant selected from the group consisting of (R1R2N)xM(═NR3)y, (R4R5N)xM(η2—R6N═C(R7)(R8)y and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N2O, NO, NO2, alkyl amines, N2H2, alkyl hydrazine, N2 and mixtures thereof, to produce said material on said substrate, where R1, R2, R3, R4, R5, R6, R7 and R8 are individually aryl C1-6 alkyl, aryl or hydrogen, M═Ta, Nb, W, Mo or mixtures thereof, and when M═Ta or Nb, x=3 and y=1 and when M═W or Mo, y=x=2;
- and (2) one or more additional metals or metal compounds other than tantalum, niobium, molybdenum or tungsten formed by decomposing a precursor of such one or more additional metals on said substrate.
Dependencies are inferred from the claim text.