Method of bonding and transferring a material to form a semiconductor device

A method of forming a semiconductor device comprising:

• providing a first semiconductor substrate, wherein the first semiconductor substrate is patterned to form a mesa and a bulk portion;
• providing a second semiconductor substrate, wherein the second semiconductor substrate has a non-planar topography, wherein the second semiconductor substrate comprises a receiving cavity;
• bonding the first semiconductor substrate to the second semiconductor substrate, wherein the bonding further comprises bonding the mesa within the receiving cavity;
• and
• removing the bulk portion of the first semiconductor substrate while leaving at least a portion of the mesa bonded to the first semiconductor substrate.

A method of forming a semiconductor device comprising:

• implanting a species into a donor substrate to form an implant region;
• patterning the donor substrate to form a bulk portion and a donor mesa, wherein the donor mesa comprises at least a portion of the implant region, wherein patterning the donor substrate is performed after the implanting;
• bonding the donor substrate to a receiving substrate via the donor mesa;
• and
• removing the bulk portion of the donor substrate while leaving a transferred layer of the donor substrate bonded to the receiving substrate.